Programme
Chaired by:
Dr. Blas Garrido
(University of Barcelona, Spain)
Chaired by:
Dr. Rosana Rodríguez
(Universitat Autònoma de Barcelona, Spain)
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Scaling Gd₀.₂Ca₀.₈MnO₃ Memristor Crossbars from Micrometer to Nanoscale Devices
A. Schulman * -
Frequency Dependence of the Resistive Switching Kinetics and Switching Voltages of HfO2-Based RRAM
H. García , G. Vinuesa , M. B. González , S. Dueñas * , H. Castán -
Memristor-based liquid spiking neural network
J. Iglesias * , A. Calomarde , A. Rubio -
Memristive Behavior in Crossbar Structures Based on BSCCO-2212 Flakes
G. Caballero *
Chaired by:
Dr. Luis Camuñas Mesa
(Instituto De Microelectrónica De Sevilla (IMSE-CNM), CSIC and Universidad de Sevilla, Spain)
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Impact of Transistor I-V Characteristics on Multi-level Programming of 1T1R RRAM Devices
E. Perez * , E. Perez-Bosch Quesada , K. Dorai Swamy Reddy , M. Uhlmann , C. Wenger -
A hybrid CMOS-memristor architecture for closed-loop epileptic seizure suppression
I. Díez de los Ríos , L. Camuñas Mesa * , T. Serrano Gotarredona , B. Linares Barranco -
Current-Controlled Inkjet-Printed h-BN Memristors Enabling Reliable Stateful Logic-in-Memory
P. Aran * , G. Vescio , J. Castillo , F. Palacio , A. Crespo , B. Garrido , S. Hernández , A. Cirera -
A figure-of-merit-based life cycle assessment framework for oxide memristor technologies
L. Serrano-Luján * , B. Arredondo , A. Urbina , J. Roldan
Datatec Instruments SL & Keysight
Chaired by:
Dr. Mireia Bargalló González
(Institut de Microelectrònica de Barcelona (IMB-CNM, CSIC), Spain)
Chaired by:
Dr. Mireia Bargalló González
(Institut de Microelectrònica de Barcelona (IMB-CNM, CSIC), Spain)
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A variability study on TiN/Ti/HfO2/W memristors with different layer stacks
P. Rios , M. Villena , M. Saludes-Tapia , F. Jiménez-Molinos , M. González , J. Roldan * -
Integration of Iberoamerican Laboratories for R+D+I on Advanced ReRAM Devices Applied to AI
J. Molina-Reyes * , G. Mendez-Jeronimo , V. Gonzalez-Diaz , P. Levy , C. Quinteros , J. Ramos-Guardarrama , M. Perez-Martinez , L. Procel , E. Acurio , E. Miranda , J. Suñe , M. Bargallo-Gonzalez , A. Ortiz-Conde , G. Fernandez-Lopez -
Impact of ALD Growth Mode on the Stochasticity and Reliability of Pt/Ag/HfO2/W/Ti Memristors
G. Vinuesa , H. García , M. B. González , H. Castán * , S. Dueñas -
Defect generation in the forming process of memristors based on h-BN
M. Villena Sánchez * , F. Jiménez-Molinos , J. Roldán Aranda -
Fully Inkjet-Printed Memristors Based on Ag/Poly(4-Vinylphenol)/Ag Structure
Z. Su * , O. Duque , A. Cantudo , C. Acal , C. Ferreyra , J. Roldán , M. Bargalló , C. Martínez-Domingo -
Validation of Memristor-Based Entropy Sources Using an Automated TRNG Testing Framework
J. Castillo * , P. Aran , F. Palacio , B. Garrido , S. Hernández , A. Cirera -
Wafer-Scale Variability and Endurance Analysis of HfO₂ and Al-Doped HfO₂ 1T–1R RRAM
R. Thileeban * , E. Perez , K. Dorai Swamy Reddy , C. Wenger -
Volatile resistive switching in fully inkjet-printed PEDOT:PSS/cPVP/Ag memristors
O. Duque Trasmonte * , Z. Su , A. Cantudo Gómez , J. Jiménez Tejada , C. Acal González , C. Ferreyra , J. Roldán Aranda , M. Bargalló González , C. Martínez Domingo -
Scaling And Integration Of Ag-Based Threshold-Type Switching Devices In Hexagonal Boron Nitride At CMOS Back-End-Of-Line
O. Alharbi * , S. Pazos , K. Zhu , Y. Yuan , M. Lanza -
Design of A 2.5μW Configurable, Error Minimizing Spiking Neuron and Memristor-Based Synapses in 130nm CMOS Technology
D. Llobet Munoz * , M. Uhlmann , L. Bolzani Pöhls , M. Krstic , C. Wenger -
Low Frequency Modelling of Standalone and Crossbar-Embedded memristors
J. Qin * , R. Saldaña , O. Amarilla , J. Verdú , M. Porti , R. Rodriguez , A. Crespo-Yepes , M. Nafría -
Argentinian network to develop Artificial Intelligence using Hardware-based Neuromorphic Computing strategies: the IA-CoNSoFi project.
P. Levy * -
Potassium-Ion Intercalation as a Mechanism for Resistive Switching in Prussian Blue MOF thin films
L. Borges de Avila Junior * , O. de Leuze , M. Villena , J. Bautista Roldan , B. Hackens , F. Abreu Araujo
Chaired by:
Prof. Albert Cirera
(UNIVERSITAT DE BARCELONA, Spain)
Chaired by:
Dr. Rosana Rodríguez
(Universitat Autònoma de Barcelona, Spain)
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Lead-Free Bismuth Halide Perovskite Memristors: From Low-Voltage Switching and Dynamic Physical Modeling for Neuromorphic Applications
S. Kim * , J. Bisquert -
Thermal Effects In h-BN Memristor Synaptic Behaviour
D. Maldonado , E. Moreno , M. Villena , Y. Ping , O. Alharbi , M. Lanza , J. Roldán * -
Stimulus-Programmable Multi-Regime Depression in Ag-Modified TaOx Memristive Synapses
R. Leal Martir * , A. van der Ree , G. Palasantzas , W. Quiñonez , M. Sánchez , D. Rubi -
Investigation of X-Ray Total Ionizing Dose Effects in Multistate 1T1R RRAM Arrays
M. Puigibert Pérez * , R. Jia , D. Reiser , K. Dorai Swamy Reddy , A. Hagelauer , M. Reichenbach , E. Pérez , C. Wenger , E. Pérez-Bosch Quesada
Chaired by:
Prof. Salvador Dueñas
(Universidad de Valladolid, Spain)
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Compact modelling of pulsed reset transtions in TiN/Ti/HfO2/W memristors programmed at different low resistance states
F. Jiménez-Molinos * , G. Vinuesa , H. García , H. Castán , S. Dueñas , M. González , A. Cantudo , M. Villena , J. Roldán -
Energy–accuracy trade-offs in memristor-based neural networks trained with Manhattan update
W. Quiñonez * , M. Sánchez , D. Rubi -
SPICE Simulation of Superconductor Memristors
T. Günkel * , E. Miranda , N. Mestres , A. Palau , J. Suñé -
Compact Probabilistic Modelling Of ReRAM For Multilevel Operation and Variability Analysis
S. Guitarra *
Chaired by:
Prof. Antonio Calomarde
(Universitat Politècnica de Catalunya, Spain)
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Interface Engineering in MAPbBr3 Memristors. Comparative Roles of PMMA and AgI on Switching Stability
B. Arredondo * , J. Pérez-Martínez , D. Martín-Martín , B. Romero Herreo , Á. Álvarez , A. Guerrero -
Voltage-Controlled Degradation in Hafnia-Based Resistive Switching Devices
C. Ferreyra * , Z. Su , F. Campabadal , E. Miranda , M. Bargalló González -
Failure mechanisms in TiN/Ti/HfO₂/W memristors: effects of polarity, environment and scaling
M. Saludes * , F. Campabadal , E. Miranda , M. Bargalló