Scheduled presentations:

• Scaling Gd₀.₂Ca₀.₈MnO₃ Memristor Crossbars from Micrometer to Nanoscale Devices
  *A. Schulman (University of Salamanca)
• Frequency Dependence of the Resistive Switching Kinetics and Switching Voltages of HfO2-Based RRAM
  H. García (Universidad de Valladolid), G. Vinuesa (Universidad de Valladolid), M. B. González (Institut de Microelectrònica de Barcelona), *S. Dueñas (Universidad de Valladolid), H. Castán (Universidad de Valladolid)
• Memristor-based liquid spiking neural network
  *J. Iglesias (UPC), A. Calomarde (UPC), A. Rubio (UPC)
• Memristive Behavior in Crossbar Structures Based on BSCCO-2212 Flakes
  *G. Caballero (IMDEA Nanociencia)