Perovskite manganite memristors based on Gd₀.₂Ca₀.₈MnO₃ (GCMO) have emerged as promising candidates for neuromorphic hardware due to their forming-free, compliance-free, interface-driven resistive switching. We report on structurally simplified Al/GCMO crossbar arrays in which GCMO simultaneously acts as the bottom electrode and active memristive layer, enabling reduced fabrication complexity and high device yield. Crossbar implementations demonstrated stable bipolar switching with an endurance exceeding 10⁵ cycles, and quasi-analog multilevel conductance modulation suitable for synaptic weight storage Area-dependent studies further revealed inverse resistance scaling for both HRS and LRS states, supporting an interface-type switching mechanism mediated by oxygen vacancy redistribution and interfacial AlOx modulation. In this talk, we will present our efforts to scale down from micrometer-size devices down to 300 nm lateral dimensions. We will discuss how the resistive scales, and what challenges emerge as we approach the nanoscale in an array level configuration.