A variability study on TiN/Ti/HfO2/W memristors with different layer stacks
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Memristive devices are at the base of several outstanding technologies linked to non-volatile memory ICs, neuromorphic engineering, hardware cryptography, and radio-frequency switches. Therefore, memristor-based research is growing by leaps and bounds in the last few years. Nevertheless, compact modeling and variability have to be studied in depth to improve the devices for final real applications. We do so here; in particular, for TiN/Ti/HfO2/W devices fabricated at the IMB-CSIC with different combinations of Ti and HfO2 layer thicknesses. We have calculated the set and reset voltages using different numerical methodologies and characterized which combinations of layer thicknessess work better from the resistive switching viewpoint. We also perform statistical techniques to analyze the variability of the technologies studied here.