Impact of Transistor I-V Characteristics on Multi-level Programming of 1T1R RRAM Devices
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RRAM technology has shown to be a suitable option for applications like non-volatile memories, neuromorphic computing accelerators and cryptographic hardware. The most reliable architecture employed is the 1-transistor-1-resistor (1T1R). A key function of this transistor (nMOS) is to allow multiple conductance-levels capability (MLC). In this work, the impact of the current-voltage (I-V) characteristics of two different nMOS, fabricated in 250 nm and 130 nm CMOS technologies, on the MLC performance of two programming algorithms, ISPVA and IGVVA, is assessed.